STMicroelectronics STW19NM60N
$ 1.419
EOL
Price and Stock
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SKU
Min
Pkg
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Inventory History
3 month trend: -100%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW19NM60N.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-03-21
Lifecycle StatusEOL (Last Updated: 1 week ago)
LTB Date2026-11-06
Related Parts
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N-Channel 650 V 0.29 Ohm 130 W Flange Mount Power Mosfet - TO-247
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N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-247 package
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MOSFET, N-CH, 500V, 14A, TO-247AC; Transistor Polarity:N Channel; Continuous Dra
Descriptions
Descriptions of STMicroelectronics STW19NM60N provided by its distributors.
Automotive-grade N-channel 600 V, 0.26 Ohm, 13 A MDmesh(TM) II Power MOSFET in TO-247 package
STW19NM60N N-channel MOSFET Transistor, 13 A, 650 V, 3-Pin TO-247
Trans MOSFET N-CH 600V 13A Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube
Power Field-Effect Transistor, 13A I(D), 600V, 0.285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance285 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1 nF
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation110 W
Rds On Max285 mΩ
Rise Time15 ns
Turn-Off Delay Time55 ns
Turn-On Delay Time12 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW19NM60N.
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant