STMicroelectronics STP75NS04Z
$ 1.05
Obsolete
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP75NS04Z.
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-06-06
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2023-08-02
LTD Date2024-02-02
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Descriptions
Descriptions of STMicroelectronics STP75NS04Z provided by its distributors.
N-channel clamped, 7 mOhm, 80 A, TO-220 fully protected MESH Overlay(TM) III Power MOSFET
STP75NS04Z N-CHANNEL MOSFET TRANSISTOR, 80 A, 33 V, 3-PIN TO-220
Trans MOSFET N-CH 33V 80A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 80A I(D), 33V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Transistor Case Style:TO-220; SVHC:No SVHC (15-Dec-2010); Avalanche Single Pulse Energy Eas:470mJ; Capacitance Ciss Typ:1860pF; On State resistance @ Vgs = 10V:11mohm; Package / Case:TO-220 (SOT-78B); Power Dissipation Pd:110W; Pulse Current Idm:320A; Termination Type:Through Hole; Voltage Vds Typ:33V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Technical Specifications
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage33 V
Drain to Source Resistance11 mΩ
Drain to Source Voltage (Vdss)33 V
Element ConfigurationSingle
Fall Time85 ns
Input Capacitance1.86 nF
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage33 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation110 W
Rds On Max11 mΩ
Resistance11 MΩ
Rise Time248 ns
Schedule B8541290080
Turn-Off Delay Time53 ns
Turn-On Delay Time16 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP75NS04Z.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant