STMicroelectronics STP57N65M5
$ 4.75
Production
Inventory History
3 month trend: +5.73%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP57N65M5.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-07-04
Lifecycle StatusProduction (Last Updated: 6 months ago)
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Descriptions
Descriptions of STMicroelectronics STP57N65M5 provided by its distributors.
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh(TM) V Power MOSFET in TO-220 package
STP57N65M5 N-CHANNEL MOSFET TRANSISTOR, 42 A, 710 V, 3-PIN TO-220
Trans MOSFET N-CH 650V 42A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 42A I(D), 650V, 0.063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
STMicroelectronics NChannel EnhancedMOSTube MDmesh M5series, Vds=710 V, 42 A, TO-220encapsulation, Through hole mounting, 3Pin
Mosfet, N-Ch, 650V, 42A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:42A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STP57N65M5
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +5.73%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance63 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance4.2 nF
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation250 W
Rds On Max63 mΩ
Resistance63 MΩ
Rise Time15 ns
Schedule B8541290080
Turn-Off Delay Time12 ns
Turn-On Delay Time73 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP57N65M5.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant