STMicroelectronics STP36N55M5
$ 3.547
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: -0.64%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP36N55M5.
CAD Models
Download STMicroelectronics STP36N55M5 symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 Component Search Engine | SymbolFootprint | 3D | Download |
 SnapEDA | Footprint | Download | |
 Ultra Librarian | SymbolFootprint | Download |
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-03-07
Lifecycle StatusObsolete (Last Updated: 1 month ago)
Related Parts
STMicroelectronicsSTP45N65M5
N-channel 650 V, 0.067 Ohm, 35 A MDmesh M5 Power MOSFET in TO-220 package
STMicroelectronicsSTP38N65M5
N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh m5 Power MOSFET in TO-220 package
STMicroelectronicsSTP42N65M5
N-channel 650 V, 0.070 Ohm, 33 A MDmesh(TM) V Power MOSFET in TO-220
InfineonIPP60R099P6XKSA1
MOSFET N-CH 600V 37.9A TO220-3 N-Channel 600 V 37.9A (Tc) 278W (Tc) Through Hole PG-TO220-3
InfineonIPP65R099C6XKSA1
MOSFET N-CH 650V 38A TO220-3 / N-Channel 650 V 38A (Tc) 278W (Tc) Through Hole PG-TO220-3
InfineonIPP65R095C7XKSA1
MOSFET N-CH 650V 24A TO220-3 N-Channel 650 V 24A (Tc) 128W (Tc) Through Hole PG-TO220-3
Descriptions
Descriptions of STMicroelectronics STP36N55M5 provided by its distributors.
N-channel 550 V, 0.06 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-220 package
STP36N55M5 N-channel MOSFET Transistor, 33 A, 600 V, 3-Pin TO-220
Trans MOSFET N-CH 550V 33A 3-Pin(3+Tab) TO-220AB Tube
Single N-Channel 600 V 190 W 62 nC Silicon Through Hole Mosfet - TO-220-3
Power Field-Effect Transistor, 33A I(D), 550V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 550V, 33A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 550V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Pow
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -0.64%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)33 A
Drain to Source Breakdown Voltage550 V
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vdss)550 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance2.67 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage550 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation190 W
Rds On Max80 mΩ
Schedule B8541290080
Turn-Off Delay Time56 ns
Turn-On Delay Time56 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP36N55M5.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant