STMicroelectronics STP22NM60N
$ 1.75
Production
Inventory History
3 month trend: +47.52%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP22NM60N.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-07-30
Lifecycle StatusProduction (Last Updated: 4 months ago)
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Descriptions
Descriptions of STMicroelectronics STP22NM60N provided by its distributors.
N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-220
N-Channel 650 V 0.22 Ohm Flange Mount MDmesh II Power MosFet - TO-220
Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220AB Tube
Power MOSFET, N Channel, 600 V, 16 A, 0.2 ohm, TO-220, Through Hole
125W(Tc) 30V 4V@ 100¦ÌA 44nC@ 10 V 1N 600V 220m¦¸@ 8A,10V 16A 1.3nF@50V TO-220 9.15mm
Power Field-Effect Transistor, 16A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N Ch, 600V, 16A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Msl:- Rohs Compliant: Yes |Stmicroelectronics STP22NM60N
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +47.52%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)16 A
Drain to Source Resistance220 mΩ
Drain to Source Voltage (Vdss)600 V
Fall Time38 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.3 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation125 W
Rds On Max220 mΩ
Resistance220 mΩ
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time74 ns
Turn-On Delay Time11 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP22NM60N.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant