onsemi FCP190N60E
$ 2.1
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FCP190N60E | 465 | 160 | |||||||||
| Rochester Electronics | FCP190N60E | 565 | 19h | |||||||||
| DigiKey | FCP190N60EOS-ND | 1,432 | 1 | Tube | ||||||||
| Newark | FCP190N60E | 0 | 150 | |||||||||
| Onlinecomponents.com | FCP190N60E | 0 | 200 | Bulk |
Inventory History
3 month trend: -16.89%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-08-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Related Parts
onsemiFCP260N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 15 A, 260 mΩ, TO-220
InfineonIPP60R165CPXKSA1
192W 20V 2.5V 39nC@ 10V 1N 650V 165m¦¸@ 10V 21A 2nF@ 100V TO-220-3 10mm*4.4mm*15.65mm
Descriptions
Descriptions of onsemi FCP190N60E provided by its distributors.
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220
Single N-Channel 600 V 0.19 Ohm 82 nC 208 W Silicon Flange Mount Mosfet TO-220-3
Power Field-Effect Transistor, 20.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
ON SEMICONDUCTOR - FCP190N60E - MOSFET, N-CH, 600V, 20.6A, TO-220
MOSFET, N-CH, 600V, 20.6A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:20.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.16ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -16.89%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Weight1.8 g
Technical
Continuous Drain Current (ID)20.6 A
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.175 nF
Max Operating Temperature150 °C
Max Power Dissipation208 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingRail/Tube
Power Dissipation208 W
Rds On Max190 mΩ
Rise Time14 ns
Schedule B8541290080
Threshold Voltage2.5 V
Turn-Off Delay Time101 ns
Turn-On Delay Time23 ns
Dimensions
Height16.51 mm
Length10.67 mm
Width4.83 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Compliance Statements