onsemi FDP12N60NZ

Name: onsemi FDP12N60NZ
Brand: onsemi
SKU: FDP12N60NZ

N-Channel Power MOSFET, UniFETTM II, 600 V, 12 A, 650 mΩ, TO-220

$ 1.242

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
Flip Electronics	FDP12N60NZ	1								7d
Avnet	FDP12N60NZ	0	544					1.242	1.132	5d
Farnell	FDP12N60NZ.	0	1		2.432*	2.069*	1.760*	1.189*	1.189*	9h
Win Source	WS-FDP12N60NZ	407	25				1.629	1.366	1.366	9h
Worldway Electronics	FDP12N60NZ	7,413	7	Tube		0.355	0.344	0.326	0.326	8h

Inventory History

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CAD Models

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Alternate Parts

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Datasheets & Documents

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IHS

Datasheet10 pages12 years ago

Farnell

onsemi

Fairchild Semiconductor

Newark

Inventory History

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-07-08

Lifecycle StatusObsolete (Last Updated: 3 days ago)

LTB Date2022-06-23

LTD Date2022-12-23

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Descriptions

Descriptions of onsemi FDP12N60NZ provided by its distributors.

N-Channel Power MOSFET, UniFETTM II, 600 V, 12 A, 650 mΩ, TO-220

onsemi

Single N-Channel 600 V 0.65 Ohm 34 nC 240 W DMOS Flange Mount Mosfet - TO-220-3

Future Electronics

Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube

Verical

Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET,N CH,600V,12A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:240W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)

Farnell

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Fairchild Semiconductor