onsemi FCP190N60

Name: onsemi FCP190N60
Brand: onsemi
SKU: FCP190N60

N-Channel Power MOSFET, SUPERFET® II, FAST, 600V, 20.2A, 199mΩ, TO-220

$ 1.153

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	FCP190N60	13,175					1.270	1.140	1.070	19h
Flip Electronics		FCP190N60	22,544								7d
Avnet		FCP190N60	0	625					1.166	1.075	5d
Farnell		FCP190N60	0	1		3.276*	3.276*	2.605*	2.068*	2.068*	19h
Microchip USA		FCP190N60	286	600	Tray				1.048	1.048	7d

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FCP190N60.

IHS

Datasheet0 pages0 years ago

onsemi

Fairchild Semiconductor

Newark

Farnell

Inventory History

3 month trend:

+0.00%

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2011-11-16

Lifecycle StatusObsolete (Last Updated: 3 days ago)

LTB Date2022-09-29

LTD Date2023-03-29

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Descriptions

Descriptions of onsemi FCP190N60 provided by its distributors.

N-Channel Power MOSFET, SUPERFET® II, FAST, 600V, 20.2A, 199mΩ, TO-220

onsemi

Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220 Tube

Verical

600 V SUPERFET II N-CHANNEL MOSFET Power Field-Effect Transistor, 20.2A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET, N-CH, 600V, 20.2A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:208W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C

Farnell

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Fairchild Semiconductor