STMicroelectronics STP21N65M5
$ 2.21
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 497-STP21N65M5-ND | 900 | 1 | Tube | ||||||||
| TME | STP21N65M5 | 0 | 1 | 15h | ||||||||
| Avnet | STP21N65M5 | 0 | 1K | 5d | ||||||||
| Arrow Electronics | STP21N65M5 | 0 | 1K | |||||||||
| Farnell | STP21N65M5 | 0 | 1 | 2h |
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP21N65M5.
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-02-27
Lifecycle StatusProduction (Last Updated: 4 months ago)
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Descriptions
Descriptions of STMicroelectronics STP21N65M5 provided by its distributors.
N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-220
STP21N65M5 N-channel MOSFET Transistor, 17 A, 650 V, 3-Pin TO-220
Trans MOSFET N-CH Si 650V 17A 3-Pin(3+Tab) TO-220AB Tube
Power MOSFET, N Channel, 650 V, 17 A, 0.15 ohm, TO-220, Through Hole
125W(Tc) 25V 5V@ 250¦ÌA 50nC@ 10 V 1N 650V 190m¦¸@ 8.5A,10V 17A 1.95nF@100V TO-220
650 V, 0.175 OHM, 17 A TO-220 N-CHANNEL MDMESH V POWER MOSFET Power Field-Effect Transistor, 17A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 650V, 17A, TO 220; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.95 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation125 W
Rds On Max179 mΩ
Schedule B8541290080
Threshold Voltage4 V
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP21N65M5.
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant