onsemi FCP20N60

Name: onsemi FCP20N60
Brand: onsemi
SKU: FCP20N60

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, TO-220

$ 2.577

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Distributor		SKU		Min	Pkg
Avnet	3	FCP20N60	1,000	228					2.839	2.750	5d
Newark		FCP20N60	137	1		6.650	4.390	4.110	3.900	3.900
Arrow Electronics	2	FCP20N60	3,700	1		2.685	2.659	2.659	2.659	2.659
Verical		FCP20N60	3,700	3			2.685	2.685	2.685	2.685
DigiKey		FCP20N60-ND	1,681	1	Tube	6.450	6.450	3.141	2.577	2.577

Inventory History

3 month trend: -3.36%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FCP20N60.

Upverter

Technical Drawing1 page6 years ago

Farnell

IHS

onsemi

DigiKey

Inventory History

3 month trend:

-3.36%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2005-02-04

Lifecycle StatusProduction (Last Updated: 3 days ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 days ago)

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Descriptions

Descriptions of onsemi FCP20N60 provided by its distributors.

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 20 A, 190 mΩ, TO-220

onsemi

MOSFET N-CH 600V 20A TO-220 / Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube

Win Source

Single N-Channel 600 V 208 W 98 nC Silicon Through Hole Mosfet - TO-220-3

Future Electronics

Power MOSFET, N Channel, 600 V, 20 A, 0.15 ohm, TO-220, Through Hole

Avnet

Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:600V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):0.19ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes

Newark

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Fairchild Semiconductor