STMicroelectronics STP20NM60
$ 3.16
Production
Inventory History
3 month trend: -77.56%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP20NM60.
CAD Models
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Related Parts
STMicroelectronicsSTP22NM60N
N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-220
STMicroelectronicsSTP15NM60ND
N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in TO-220 package
Descriptions
Descriptions of STMicroelectronics STP20NM60 provided by its distributors.
N-Channel 600V - 0.25Ohm - 20A - TO-220 MDmesh™ POWER MOSFET
Power MOSFET, N Channel, 600 V, 20 A, 0.29 ohm, TO-220, Through Hole
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220AB Tube
MOSFET 192W(Tc) 30V 5V@250µA 54nC@10V N-Channel 600V 290mΩ@10A,10V 20A 1.5nF@25V TO-220 TH 9.15mm H
Power Field-Effect Transistor, 20A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 600V, 20A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.29ohm; Rds(on) Test Voltage Vgs: 30V; Threshold Voltage Vgs: 4V; Power
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -77.56%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)20 A
Current Rating20 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance290 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.5 nF
Max Operating Temperature150 °C
Max Power Dissipation192 W
Min Breakdown Voltage600 V
Min Operating Temperature-65 °C
Nominal Vgs4 V
Number of Elements1
Power Dissipation192 W
Rds On Max290 mΩ
Resistance290 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time42 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)650 V
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP20NM60.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant