STMicroelectronics STP20N95K5
$ 4.825
Production
Inventory History
3 month trend: -6.54%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-01-12
Lifecycle StatusProduction (Last Updated: 4 months ago)
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Descriptions
Descriptions of STMicroelectronics STP20N95K5 provided by its distributors.
STMicroelectronics N-Channel MOSFET MDmesh SuperMESH Vds=950V 17.5A TO-220 TH 3-Pin
N-channel 950 V, 0.275 Ohm typ., 17.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220 package
STP20N95K5 N-CHANNEL MOSFET TRANSISTOR, 17.5 A, 950 V, 3-PIN TO-220
Trans MOSFET N-CH 950V 17.5A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 15.5A I(D), 950V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 950V, 17.5A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 17.5A; Drain Source Voltage Vds: 950V; On Resistance Rds(on): 0.275ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -6.54%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)15.5 A
Drain to Source Breakdown Voltage950 V
Drain to Source Resistance330 mΩ
Drain to Source Voltage (Vds)950 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.5 nF
Max Operating Temperature150 °C
Max Power Dissipation210 W
Min Breakdown Voltage950 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation250 W
Rds On Max330 mΩ
Resistance330 MΩ
Rise Time12 ns
Schedule B8541290080
Turn-Off Delay Time70 ns
Turn-On Delay Time17 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant