STMicroelectronics STP18N65M2
N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package
$ 1.272
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Inventory History
3 month trend: -0.27%
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Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP18N65M2.
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-01-13
Lifecycle StatusProduction (Last Updated: 3 months ago)
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Descriptions
Descriptions of STMicroelectronics STP18N65M2 provided by its distributors.
N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package
STP18N65M2 N-CHANNEL MOSFET TRANSISTOR, 12 A, 650 V, 3-PIN TO-220
Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220AB Tube
650V 12A 330m´Î@10V6A 110W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Mosfet, N-Ch, 650V, 12A, 150Deg C, 110W; |Stmicroelectronics STP18N65M2
STMicroelectronics NChannel EnhancedMOSTube MDmesh M2series, Vds=650 V, 12 A, TO-220encapsulation, Through hole mounting, 3Pin
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -0.27%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Drain to Source Resistance330 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance770 pF
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage650 V
Number of Elements1
Rds On Max330 mΩ
Turn-Off Delay Time46 ns
Turn-On Delay Time11 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP18N65M2.