STMicroelectronics STP19NM50N
$ 2.084
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Min
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Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP19NM50N.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-02-09
Lifecycle StatusProduction (Last Updated: 1 month ago)
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Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 500V 17A TO-220
STMicroelectronicsSTP14NM50N
N-channel 500 V, 0.28 Ohm, 12 A MDmesh(TM) II Power MOSFET in TO-220 package
onsemiFCP260N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 15 A, 260 mΩ, TO-220
Descriptions
Descriptions of STMicroelectronics STP19NM50N provided by its distributors.
N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-220
STP19NM50N N-CHANNEL MOSFET TRANSISTOR, 14 A, 500 V, 3-PIN TO-220
Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220AB Tube
14 A 500 V 0.25 ohm N-CHANNEL Si POWER MOSFET TO-220AB
Power Field-Effect Transistor, 14A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
STMicroelectronics NChannel EnhancedMOSTube MDmeshseries, Vds=500 V, 14 A, TO-220encapsulation, Through hole mounting, 3Pin
MOSFET, N CH, 500V, 14A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance250 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1 nF
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation110 W
Rds On Max250 mΩ
Resistance250 mΩ
Rise Time16 ns
Threshold Voltage3 V
Turn-Off Delay Time61 ns
Turn-On Delay Time12 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP19NM50N.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant