STMicroelectronics STP11NM80
$ 2.841
Production
Inventory History
3 month trend: -4.75%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP11NM80.
CAD Models
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Descriptions
Descriptions of STMicroelectronics STP11NM80 provided by its distributors.
N-channel 800 V, 0.35 Ohm, 11 A MDmesh(TM) Power MOSFET in TO-220
STP11NM80 N-CHANNEL MOSFET TRANSISTOR, 11 A, 800 V, 3-PIN TO-220
Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 11A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd
Mosfet, N, To-220; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:11A; Tensión Drenaje-Fuente Vds:800V; Resistencia De Activación Rds(On):400Mohm; Tensión Vgs De Medición Rds(On):10V; Tensión Umbral Vgs:4V |Stmicroelectronics STP11NM80
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -4.75%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance400 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.63 nF
Max Operating Temperature150 °C
Max Power Dissipation205 W
Min Breakdown Voltage800 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation150 W
Rds On Max400 mΩ
Resistance400 mΩ
Rise Time17 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time46 ns
Turn-On Delay Time22 ns
Voltage Rating (DC)800 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP11NM80.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant