STMicroelectronics STP13NK60Z
$ 1.27
Production
Inventory History
3 month trend: -15.13%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP13NK60Z.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
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N-channel 525 V, 0.41 Ohm, 10 A SuperMESH3(TM) Power MOSFET in TO-220 package
Descriptions
Descriptions of STMicroelectronics STP13NK60Z provided by its distributors.
N-Channel 600 V, 0.48 Ohm, 13 A TO-220 Zener-Protected SuperMesh(TM) POWER MOSFET
Transistor MOSFET N-CH 600V 13A 3-Pin (3+Tab) TO-220 Tube
STP13NK60Z N-CHANNEL MOSFET TRANSISTOR, 13 A, 600 V, 3-PIN TO-220
STP13NK60 Series 600 V 13 A 550 mOhm Through Hole N-Ch Power MOSFET - TO-220-3
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.55ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -15.13%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)13 A
Current Rating13 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance550 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.03 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation135 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation150 W
Rds On Max550 mΩ
Rise Time14 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time61 ns
Turn-On Delay Time22 ns
Voltage Rating (DC)600 V
Dimensions
Height19.68 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STP13NK60Z.
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant