STMicroelectronics STGWA30M65DF2

Name: STMicroelectronics STGWA30M65DF2
Brand: STMicroelectronics
SKU: STGWA30M65DF2

Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube

$ 1.371

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Distributor		SKU		Min	Pkg
Newark		STGWA30M65DF2	100	1		2.570	2.570	2.570	2.570	2.570
DigiKey		497-15842-5-ND	600	1	Tube	3.710	3.710	2.022	1.374	1.131
TME	2	STGWA30M65DF2	0	1		2.540	2.540	2.540	2.540	2.540	11h
Avnet		STGWA30M65DF2	0	600					1.306	1.086	4d
Arrow Electronics		STGWA30M65DF2	0	600					1.368	1.328

Inventory History

3 month trend: -90.28%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for STMicroelectronics STGWA30M65DF2.

Newark

Datasheet18 pages10 years ago

Datasheet19 pages10 years ago

element14 APAC

TME

Inventory History

3 month trend:

-90.28%

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2015-05-04

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of STMicroelectronics STGWA30M65DF2 provided by its distributors.

Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube

Verical

Trench gate field-stop IGBT M series, 650 V 30 A low loss

STMicroelectronics

IGBT, SINGLE, 650V, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pi

Farnell

Igbt, Single, 650V, 60A, To-247; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:258W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C; Msl:- Rohs Compliant: Yes |Stmicroelectronics STGWA30M65DF2

Newark

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Manufacturer Aliases

STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names: