STMicroelectronics STF26NM60N
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-220FP package
$ 3.642
Production
Inventory History
3 month trend: -5.62%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STF26NM60N.
CAD Models
Download STMicroelectronics STF26NM60N symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 Component Search Engine | SymbolFootprint | 3D | Download |
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 3.642
$ 1.311
Stock
365,818
129,423
Authorized Distributors
6
6
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220-3
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
20 A
20 A
Threshold Voltage
-
-
Rds On Max
165 mΩ
165 mΩ
Gate to Source Voltage (Vgs)
25 V
-
Power Dissipation
-
-
Input Capacitance
1.8 nF
-
Related Parts
STMicroelectronicsSTF28N60M2
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-220FP package
STMicroelectronicsSTF28NM50N
N-channel 500 V, 0.135 Ohm typ., 21 A MDmesh(TM) II Power MOSFET in TO-220FP package
STMicroelectronicsSTF32NM50N
N-channel 500 V, 0.1 Ohm typ., 22 A MDmesh(TM) II Power MOSFET in TO-220FP package
VishaySIHF22N60E-GE3
MOSFET N-Ch 600V 21A 35W(Tc) 180mΩ@11A,10V 86nC@10V 1.92nF@100V TO-220 TH 16.12mm H
Descriptions
Descriptions of STMicroelectronics STF26NM60N provided by its distributors.
N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-220FP package
STF26NM60N N-CHANNEL MOSFET TRANSISTOR, 20 A, 600 V, 3-PIN TO-220FP
Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FP Tube
20 A 600 V 0.165 ohm N-CHANNEL Si POWER MOSFET TO-220AB
Power Field-Effect Transistor, 20A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
STMicroelectronics NChannel EnhancedMOSTube MDmeshseries, Vds=600 V, 20 A, TO-220FPencapsulation, Through hole mounting, 3Pin
MOSFET, N CH, 600V, 20A, TO220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.135ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Pow
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -5.62%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)20 A
Drain to Source Resistance165 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.8 nF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
Rds On Max165 mΩ
Rise Time25 ns
Turn-Off Delay Time85 ns
Turn-On Delay Time13 ns
Dimensions
Height16.4 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STF26NM60N.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant