STMicroelectronics STF10N65K3
$ 0.81
Production
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STF10N65K3.
CAD Models
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Descriptions
Descriptions of STMicroelectronics STF10N65K3 provided by its distributors.
Power MOSFET, N Channel, 650 V, 10 A, 1 ohm, TO-220FP, Through Hole
N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220FP package
Trans MOSFET N-CH 650V 10A 3-Pin(3+Tab) TO-220FP Tube
35W(Tc) 30V 4.5V@ 100¦ÌA 42nC@ 10 V 1individualNChannel 650V 1¦¸@ 3.6A,10V 10A 1.18nF@25V TO-220FP Through hole mounting
MOSFET, N CH, 650V, 10A, TO 220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power
650 V, 10 A, 0.75 OHM TYP SUPERMESH3 N-CHANNEL POWER MOSFET IN TO-220FP PACKAGE Power Field-Effect Transistor, 11A I(D), 650V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance850 mΩ
Drain to Source Voltage (Vdss)650 V
Fall Time35 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.18 nF
Max Operating Temperature150 °C
Max Power Dissipation35 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation35 W
Rds On Max1 Ω
Rise Time14 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time44 ns
Turn-On Delay Time14.5 ns
Dimensions
Height16.4 mm
Length10.4 mm
Width4.6 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STF10N65K3.
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant