STMicroelectronics STD86N3LH5
$ 0.563
Production
Inventory History
3 month trend: -3.49%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STD86N3LH5.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-04-16
Lifecycle StatusProduction (Last Updated: 1 month ago)
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N-CHANNEL 30V - 0.0090 OHM - 40A DPAK LOW GATE CHARGE STripFET MOSFET
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Descriptions
Descriptions of STMicroelectronics STD86N3LH5 provided by its distributors.
STD86N3LH5 Series 30 V 0.005 Ohm 80 A N-Channel STripFET H5 Power Mosfet-DPAK-3
Power MOSFET, N Channel, 30 V, 80 A, 0.0045 ohm, TO-252 (DPAK), Surface Mount
Automotive-grade N-channel 30 V, 0.0045 Ohm typ., 80 A STripFET H5 Power MOSFET in a DPAK package
Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Mosfet, Aec-Q101, N-Ch, 30V, To-252; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V Rohs Compliant: Yes |Stmicroelectronics STD86N3LH5
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -3.49%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time10.8 ns
Gate to Source Voltage (Vgs)22 V
Input Capacitance1.85 nF
Max Operating Temperature175 °C
Max Power Dissipation70 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation70 W
Rds On Max5 mΩ
Resistance5 MΩ
Rise Time14 ns
Turn-Off Delay Time23.6 ns
Turn-On Delay Time6 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STD86N3LH5.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant