STMicroelectronics STD5N60M2
N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package
$ 0.608
Production
Inventory History
3 month trend: -0.46%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STD5N60M2.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-30
Lifecycle StatusProduction (Last Updated: 7 months ago)
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28.4W(Tc) 20V 3.5V@ 90¦ÌA 9.4nC@ 10 V 1N 600V 1.4¦¸@ 1.1A,10V 3.2A 200pF@100V TO-252 2.56mm
Descriptions
Descriptions of STMicroelectronics STD5N60M2 provided by its distributors.
N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package
N-Channel 600 V 3.5 A 1.4 Ohm Surface Mount MDmesh II Plus Mosfet - DPAK
Trans MOSFET N-CH 650V 3.5A 3-Pin(2+Tab) DPAK T/R
Hv Mosfet Mdmesh |Stmicroelectronics STD5N60M2
600V 3.5A 45W 1.4´Î@10V1.7A 4V@250Ã×A N Channel DPAK MOSFETs ROHS
45W(Tc) 25V 4V@ 250µA 8.5nC@ 10 V 1individualNChannel 600V 1.4Ω@ 1.7A,10V 3.5A 211pF@100V TO-252 SMD mount
Power Field-Effect Transistor, 3.5A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -0.46%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-252-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)3.5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1.4 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance211 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Rds On Max1.4 Ω
Rise Time3 ns
Turn-Off Delay Time70 ns
Turn-On Delay Time11.8 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STD5N60M2.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant