STMicroelectronics STD6N65M2
$ 0.493
Production
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STD6N65M2.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-08-04
Lifecycle StatusProduction (Last Updated: 6 months ago)
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Descriptions
Descriptions of STMicroelectronics STD6N65M2 provided by its distributors.
N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in DPAK package
STMICROELECTRONICS STD6N65M2 Power MOSFET, N Channel, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
Power Field-Effect Transistor, 4A I(D), 650V, 1.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N CHANNEL, 650V, 4A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)4 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance1.35 Ω
Drain to Source Voltage (Vdss)650 V
Fall Time20 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance226 pF
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Rds On Max1.35 Ω
Rise Time7 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time6.5 ns
Turn-On Delay Time19 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STD6N65M2.