STMicroelectronics STD11NM60ND
$ 2.927
Obsolete
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SKU
Min
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Inventory History
3 month trend: -100%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STD11NM60ND.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-04-24
Lifecycle StatusObsolete (Last Updated: 1 month ago)
Related Parts
STMicroelectronicsSTD13NM60N
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package
STMicroelectronicsSTD18N55M5
Mosfet Transistor, N Channel, 13 A, 550 V, 0.18 Ohm, 10 V, 4 V Rohs Compliant: Yes
STMicroelectronicsSTD16N65M5
N-channel 650 V, 0.230 Ohm typ., 12 A MDmesh M5 Power MOSFET in DPAK pakage
Descriptions
Descriptions of STMicroelectronics STD11NM60ND provided by its distributors.
N-channel 600 V, 0.37 Ohm typ., 10 A FDmesh II Power MOSFET in DPAK package
STD11NM60ND N-channel MOSFET Transistor, 10 A, 600 V, 3-Pin TO-252
Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 600V 10A DPAK
Power Field-Effect Transistor, 10A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
90W(Tc) 25V 5V@ 250¦ÌA 30nC@ 10 V 1individualNChannel 600V 450m¦¸@ 5A,10V 10A 850pF@50V TO-252 SMD mount 6.6mm*6.2mm*2.4mm
MOSFET, N CH, 600V, 10A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.37ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:90W; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance450 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance850 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingCut Tape (CT)
Power Dissipation90 W
Rds On Max450 mΩ
Resistance450 mΩ
Rise Time7 ns
Threshold Voltage3 V
Turn-Off Delay Time50 ns
Turn-On Delay Time16 ns
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STD11NM60ND.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant