STMicroelectronics STD120N4F6
$ 0.88
Production
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Min
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Inventory History
3 month trend: -65.13%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-02-09
Lifecycle StatusProduction (Last Updated: 2 months ago)
Related Parts
STMicroelectronicsSTD120N4LF6
Mosfet Transistor, N Channel, 80 A, 40 V, 0.004 Ohm, 10 V, 1 V |Stmicroelectronics STD120N4LF6
STMicroelectronicsSTD155N3H6
N-channel 30 V, 2.5 mOhm, 80 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
Descriptions
Descriptions of STMicroelectronics STD120N4F6 provided by its distributors.
N-channel 40 V, 3.5 mOhm, 80 A STripFET F6 Power MOSFET in DPAK package
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 40V 80A DPAK
Power Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
110W(Tc) 20V 4V@ 250µA 65nC@ 10 V 1individualNChannel 40V 4mΩ@ 40A,10V 80A 3.85nF@25V TO-252 SMD mount 6.6mm(Length)*6.2mm(width)
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -65.13%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.85 nF
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation110 W
Rds On Max4 mΩ
Resistance4 MΩ
Rise Time70 ns
Schedule B8541290080
Turn-Off Delay Time40 ns
Turn-On Delay Time20 ns
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant