STMicroelectronics STD18N55M5
$ 1.53
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Inventory History
3 month trend: -16.23%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STD18N55M5.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-02-09
Lifecycle StatusProduction (Last Updated: 2 months ago)
Related Parts
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N-channel 650 V, 0.230 Ohm typ., 12 A MDmesh M5 Power MOSFET in DPAK pakage
STMicroelectronicsSTD18N65M5
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh M5 Power MOSFET in DPAK package
STMicroelectronicsSTD11NM60ND
N-channel 600 V, 0.37 Ohm typ., 10 A FDmesh II Power MOSFET in DPAK package
onsemiFCD380N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 10.2 A, 380 mΩ, DPAK
Descriptions
Descriptions of STMicroelectronics STD18N55M5 provided by its distributors.
Mosfet Transistor, N Channel, 13 A, 550 V, 0.18 Ohm, 10 V, 4 V Rohs Compliant: Yes
N-channel 550 V, 0.150 Ohm typ., 16 A MDmesh M5 Power MOSFET in DPAK package
STD18N55M5 N-CHANNEL MOSFET TRANSISTOR, 13 A, 550 V, 3-PIN TO-252
N-Channel 550 V 0.18 mOhm 13 A 90 W Surface Mount Power Mosfet - TO-252
Power Field-Effect Transistor, 14A I(D), 550V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
STMicroelectronics NChannel EnhancedMOSTube MDmesh M5series, Vds=550 V, 13 A, DPAK (TO-252)encapsulation, surface mount, 3Pin
MOSFET, N CH, 550V, 13A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 550V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power D
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -16.23%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage550 V
Drain to Source Resistance210 mΩ
Drain to Source Voltage (Vdss)550 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.26 nF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage550 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation90 W
Rds On Max192 mΩ
Resistance180 mΩ
Rise Time9.5 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time29 ns
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STD18N55M5.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant