STMicroelectronics STB8NM60T4
$ 1.467
Production
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Min
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Inventory History
3 month trend: +6.71%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB8NM60T4.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 1 month ago)
LTB Date2012-02-15
LTD Date2012-08-15
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Descriptions
Descriptions of STMicroelectronics STB8NM60T4 provided by its distributors.
Power MOSFET, N Channel, 600 V, 8 A, 1 Ohm, TO-263 (D2PAK), 3 Pins, Surface Mount
Trans MOSFET N-CH 600V 8A 3-Pin(2+Tab) D2PAK T/R
N-CHANNEL 650V@Tjmax - 0.9Ohm - 8A - TO-220 /FP- D2/D/IPAK
100W(Tc) 30V 5V@ 250µA 18nC@ 10 V 1individualNChannel 650V 1Ω@ 2.5A,10V 8A 400pF@25V D2PAK SMD mount 10.4mm*9.35mm*4.6mm
MOSFET, N-CH, 650V, 8A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.9ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dis
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +6.71%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)8 A
Current Rating5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance400 pF
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
PackagingTape and Reel
Power Dissipation100 W
Rds On Max1 Ω
Resistance1 Ω
Rise Time10 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time23 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)650 V
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB8NM60T4.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant