STMicroelectronics STB10NK60ZT4
$ 1.468
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | STB10NK60ZT4 | 1,482 | 1 | |||||||||
| Verical | STB10NK60ZT4 | 4,000 | 1K | |||||||||
| Arrow Electronics | STB10NK60ZT4 | 4,000 | 1K | |||||||||
| DigiKey | 497-6544-1-ND | 1,000 | 1 | Cut Tape | ||||||||
| TME | STB10NK60ZT4 | 0 | 1K | 20h |
Inventory History
3 month trend: -0.37%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB10NK60ZT4.
CAD Models
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|---|---|---|---|
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 SnapEDA | Footprint | 3D | Download |
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Descriptions
Descriptions of STMicroelectronics STB10NK60ZT4 provided by its distributors.
Transistor: N-MOSFET; unipolar; 600V; 10A; 0.75ohm; 115W; -55+150 deg.C; SMD; TO263 (D2PAK)
N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in D2PAK package
Transistor MOSFET N-CH 600V 10A 3-Pin (2+Tab) D2PAK T/R
STB10NK60ZT4 N-CHANNEL MOSFET TRANSISTOR, 10 A, 600 V, 3-PIN D2PAK
Power MOSFET, N Channel, 600 V, 4.5 A, 0.65 ohm, TO-263 (D2PAK), Surface Mount
115W(Tc) 30V 4.5V@ 250¦ÌA 70nC@ 10 V 1N 600V 750m¦¸@ 4.5A,10V 10A 1.37nF@25V D2PAK
N-Channel 600 V 0.75 Ohm Zener Protected Power MosFet - I2PAK
N-CHANNEL 600V-0.65 OHM-10A-D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 600V, 10A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.65ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Po
Mosfet, N Channel, 600V, 10A, D2Pak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:4.5A; Tensión Drenaje-Fuente Vds:600V; Resistencia De Activación Rds(On):650Mohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STB10NK60ZT4
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -0.37%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)10 A
Current Rating10 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance750 mΩ
Drain to Source Voltage (Vdss)600 V
Dual Supply Voltage600 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.37 nF
Max Operating Temperature150 °C
Max Power Dissipation115 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Nominal Vgs3.75 V
Number of Elements1
PackagingTape and Reel
Power Dissipation115 W
Rds On Max750 mΩ
Resistance750 mΩ
Rise Time20 ns
TerminationSMD/SMT
Threshold Voltage3.75 V
Turn-Off Delay Time55 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)600 V
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB10NK60ZT4.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant