STMicroelectronics STB9NK60ZT4
$ 1.419
Production
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 1 month ago)
Related Parts
STMicroelectronicsSTB9NK50ZT4
STB9NK50ZT4 N-CHANNEL MOSFET TRANSISTOR, 7.2 A, 500 V, 3-PIN D2PAK
STMicroelectronicsSTB6NK60ZT4
N-channel 600 V - 1 Ohm - 6 A - D2PAK Zener-Protected SuperMESH(TM) Power MOSFET
Descriptions
Descriptions of STMicroelectronics STB9NK60ZT4 provided by its distributors.
N-channel 600 V, 0.85 Ohm typ., 7 A Zener-protected SuperMESH(TM) Power MOSFET in D2PAK package
STB9NK60ZT4 N-CHANNEL MOSFET TRANSISTOR, 7 A, 600 V, 3-PIN D2PAK
Trans MOSFET N-CH 600V 7A 3-Pin(2+Tab) D2PAK Tube
125W(Tc) 30V 4.5V@ 100¦ÌA 53nC@ 10 V 1individualNChannel 600V 950m¦¸@ 3.5A,10V 7A 1.11nF@25V D2PAK SMD mount 10.4mm*9.35mm*4.6mm
MOSFET, N CH, 600V, 7A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.85ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 7A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 600V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)7 A
Current Rating7 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance950 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.11 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation125 W
Rds On Max950 mΩ
Resistance950 mΩ
Rise Time17 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time43 ns
Turn-On Delay Time19 ns
Voltage Rating (DC)600 V
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant