STMicroelectronics STB32N65M5
$ 5.87
Production
Inventory History
3 month trend: +0.00%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB32N65M5.
CAD Models
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Descriptions
Descriptions of STMicroelectronics STB32N65M5 provided by its distributors.
N-channel 650 V, 0.095 Ohm, 24 A MDmesh M5 Power MOSFET in D2PAK package
N-Channel 650 V 24 A 119 mOhm 150 W Surface Mount MDmesh Power Mosfet - D2PAK
Trans MOSFET N-CH Si 650V 24A 3-Pin(2+Tab) D2PAK T/R
STB32N65M5 N-CHANNEL MOSFET TRANSISTOR, 24 A, 650 V, 2+TAB-PIN TO-263
N-channel 650 V, 0.095 Ω, 24 A, MDmesh™ V Power MOSFET in D²PAK, I²PAK, TO-220FP, TO-220, TO-247
650 V, 0.095 OHM, 24 A, D2PAK N-CHANNEL MDMESH V POWER MOSFET Power Field-Effect Transistor, 24A I(D), 650V, 0.119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Mosfet, N Ch, 650V, 24A, D2Pak; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.095Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Rohs Compliant: Yes |Stmicroelectronics STB32N65M5
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)24 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance119 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance3.32 nF
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation150 W
Rds On Max119 mΩ
Resistance119 MΩ
Rise Time12 ns
Threshold Voltage4 V
Turn-Off Delay Time53 ns
Turn-On Delay Time53 ns
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB32N65M5.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant