STMicroelectronics STB11NK50ZT4
$ 1.525
Production
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB11NK50ZT4.
CAD Models
Download STMicroelectronics STB11NK50ZT4 symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 Component Search Engine | SymbolFootprint | 3D | Download |
 SnapEDA | Footprint | 3D | Download |
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.
Related Parts
VishayIRFS11N50APBF
Power MOSFET, N Channel, 500 V, 11 A, 0.52 ohm, TO-263 (D2PAK), Surface Mount
STMicroelectronicsSTB11NM60T4
STB11NM60T4 N-channel MOSFET Transistor, 11 A, 650 V, 3-Pin D2PAK
STMicroelectronicsSTB9NK50ZT4
STB9NK50ZT4 N-CHANNEL MOSFET TRANSISTOR, 7.2 A, 500 V, 3-PIN D2PAK
STMicroelectronicsSTB11NK40ZT4
N-Channel 400V - 0.49 Ohm - 9A - D2PAK Zener-Protected SuperMESH(TM) POWER MOSFET
Descriptions
Descriptions of STMicroelectronics STB11NK50ZT4 provided by its distributors.
Power MOSFET, N Channel, 500 V, 4.5 A, 0.48 ohm, TO-263 (D2PAK), Surface Mount
N-Channel 500 Vds 10 A 520 mOhm 125 W Zener Protected Mosfet - D2Pak
N-channel 500 V, 0.48 Ohm typ., 10 A Zener-protected SuperMESH(TM) Power MOSFET in D2PAK package
Trans MOSFET N-CH 500V 10A 3-Pin(2+Tab) D2PAK T/R
125W(Tc) 30V 4.5V@ 100¦ÌA 68nC@ 10 V 1individualNChannel 500V 520m¦¸@ 4.5A,10V 10A 1.39nF@25V D2PAK SMD mount 4.83mm(height)
MOSFET, N CH, 500V, 10A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.5A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.48ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Po
N-CHANNEL 500 V-0.48 OHM-10 A D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET Power Field-Effect Transistor, 10A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Mosfet, N Channel, 500V, 10A, D2Pak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:4.5A; Tensión Drenaje-Fuente Vds:500V; Resistencia De Activación Rds(On):480Mohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STB11NK50ZT4
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -100%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)10 A
Current Rating10 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance520 mΩ
Drain to Source Voltage (Vdss)500 V
Dual Supply Voltage500 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.39 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Nominal Vgs3.75 V
Number of Elements1
Power Dissipation125 W
Rds On Max520 mΩ
Resistance520 mΩ
Rise Time18 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage3.75 V
Turn-Off Delay Time41 ns
Turn-On Delay Time14.5 ns
Voltage Rating (DC)500 V
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB11NK50ZT4.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant