STMicroelectronics STB11NM60T4
$ 2.039
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 497-6545-1-ND | 1,446 | 1 | Cut Tape | ||||||||
| TME | STB11NM60T4 | 0 | 1K | 18h | ||||||||
| Future Electronics | STB11NM60T4 | 0 | 1K | Tape & Reel | ||||||||
| Avnet | STB11NM60T4 | 0 | 1K | 7h | ||||||||
| Arrow Electronics | STB11NM60T4 | 0 | 1K |
Inventory History
3 month trend: +44.02%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB11NM60T4.
CAD Models
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|---|---|---|---|
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
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Descriptions
Descriptions of STMicroelectronics STB11NM60T4 provided by its distributors.
STB11NM60T4 N-channel MOSFET Transistor, 11 A, 650 V, 3-Pin D2PAK
N-channel 600 V, 0.4 Ohm, 11 A, I2PAK, D2PAK MDmesh(TM) Power MOSFET
Power MOSFET, N Channel, 650 V, 5.5 A, 0.4 ohm, TO-263 (D2PAK), Surface Mount
Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 650V, 11A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +44.02%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance450 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1 nF
Max Operating Temperature150 °C
Max Power Dissipation160 W
Min Breakdown Voltage600 V
Min Operating Temperature-65 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation160 W
Rds On Max450 mΩ
Resistance450 MΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time6 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)600 V
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STB11NM60T4.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant