onsemi NJT4030PT1G
Bipolar Transistors - BJT 40V 3A PNP BIPOLAR POWER TRANSISTOR
$ 0.182
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: -11.98%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.182
$ 0.173
Stock
1,835,095
1,418,591
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT-223
SOT-223
Polarity
PNP
PNP
Collector Emitter Breakdown Voltage
40 V
40 V
Max Collector Current
3 A
3 A
Transition Frequency
160 MHz
160 MHz
Collector Emitter Saturation Voltage
500 mV
500 mV
hFE Min
100
100
Power Dissipation
2 W
800 mW
Supply Chain
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Related Parts
Diodes Inc.DJT4030P-13
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
Diodes Inc.DMJT9435-13
Bipolar (BJT) Single Transistor, PNP, 30 V, 800 mA, 1.2 W, SOT-223, Surface Mount
Descriptions
Descriptions of onsemi NJT4030PT1G provided by its distributors.
Bipolar Transistors - BJT 40V 3A PNP BIPOLAR POWER TRANSISTOR
Bipolar Transistors (BJT); NJT4030PT1G; ON SEMICONDUCTOR; PNP; 40 V; 3 A; 4
NJT Series 40 V 3 A Surface Mount PNP Silicon Power Transistor - SOT-223
Trans GP BJT PNP 40V 3A Automotive 4-Pin(3+Tab) SOT-223 T/R
500mV@300mA, 3A PNP 2W 6V 100nA 40V 40V 3A SOT-223 SMD 6.5mm × 3.5mm × 1.63mm
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
Trans Bjt Single, Pnp, 40V, 3A; |Onsemi NJT4030PT1G.
The combination of low saturation voltage and high gain makes this an ideal device for high speed switching applications where power savings is a concern.
TRANS, BIPOL, PNP,-40V, SOT223; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -40V; Transition Frequency ft: 160MHz; Power Dissipation Pd: 2W; DC Collector Current: -3A; DC Current Gain hFE: 100hFE; Transistor
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -11.98%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-223
Contact PlatingTin
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Collector Base Voltage (VCBO)40 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)40 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency160 MHz
Gain Bandwidth Product160 MHz
hFE Min100
Max Breakdown Voltage40 V
Max Collector Current3 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation2 W
Schedule B8541290080
Transition Frequency160 MHz
Dimensions
Height1.75 mm
Length6.6802 mm
Width3.7084 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements