onsemi NDS356AP

Name: onsemi NDS356AP
Brand: onsemi
SKU: NDS356AP

Trans Mosfet P-ch 30V 1.1A 3-PIN SOT-23 T/r / Mosfet P-ch 30V 1.1A SSOT3

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
Farnell	2	NDS356AP.	0	5			0.629*	0.308*	0.187*	0.151*	12h
Component Stockers USA		NDS356AP	92,316			0.150	0.150	0.140	0.130	0.130	>1wk
Win Source		WS-NDS356AP	15,000	45				1.105	0.918	0.918	18h
Worldway Electronics		NDS356AP	11,602	7	Tape & Reel		0.300	0.286	0.286	0.286	17h
Maritex		NDS356AP-U1	442	1		3.863	3.144	2.332	1.970	1.970	21h

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi NDS356AP.

Farnell

Datasheet8 pages4 years ago

Datasheet7 pages28 years ago

Datasheet0 pages0 years ago

Datasheet8 pages17 years ago

Datasheet5 pages20 years ago

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Future Electronics

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CAD Models

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Supply Chain

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-09-01

Lifecycle StatusObsolete (Last Updated: 2 days ago)

LTB Date2022-01-31

LTD Date2023-01-31

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)

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Descriptions

Descriptions of onsemi NDS356AP provided by its distributors.

Trans MOSFET P-CH 30V 1.1A 3-Pin SOT-23 T/R / MOSFET P-CH 30V 1.1A SSOT3

Win Source

-30V P-Channel Logic Level Enhancement Mode Field Effect Transistor

onsemi

P-Channel 30 V 0.3 Ohm SMT Enhance Mode Field Effect Transistor - SSOT-3

Future Electronics

MOSFET, P SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 1.1A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.6V; Power Dissipatio

Farnell

MOSFET, P SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):300mohm; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23 (TO-236); Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:NDS356AP; Tape Width:8mm; Termination Type:SMD; Voltage Vgs th Max:-2.5V

element14 APAC

SuperSOT™-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Fairchild Semiconductor