onsemi MUN5212DW1T1G

Name: onsemi MUN5212DW1T1G
Brand: onsemi
SKU: MUN5212DW1T1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

$ 0.063

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	MUN5212DW1T1G	5,990	50K							6h
Newark	2	MUN5212DW1T1G	2,315	5	Cut Tape		0.159	0.104	0.092	0.092
Verical		MUN5212DW1T1G	18,000	9678						0.039
Arrow Electronics	2	MUN5212DW1T1G	2,886	1		0.037	0.022	0.016	0.016	0.016
Rochester Electronics		MUN5212DW1T1G	24,000					0.037	0.031	0.028	4h

Inventory History

3 month trend: -19.57%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MUN5212DW1T1G.

IHS

Datasheet11 pages8 years ago

Master Electronics

element14 APAC

Newark

element14

Inventory History

3 month trend:

-19.57%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiMUN5212DW1T1G

onsemiMUN5212DW1T1

Price @ 1000

$ 0.063

$ 0.055

Stock

1,788,878

763,779

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-363-6

Polarity

NPN

Collector Emitter Breakdown Voltage

50 V

Max Collector Current

100 mA

Transition Frequency

Collector Emitter Saturation Voltage

250 mV

hFE Min

Power Dissipation

187 mW

250 mW

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-11-25

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi MUN5212DW1T1G provided by its distributors.

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

IHS

Dual NPN Bipolar Digital Transistor (BRT)

onsemi

Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R

Verical

MUN5212DW1 Series 1.9 V SMT NPN-Pre-Biased Digital Transistor - SOT-363

Future Electronics

2 NPN pre-biased (Dual) 256mW 100mA 50V SOT-363 Digital Transistors ROHS

Dasenic

Brt Transistor, 50Vdc, 22K/22K, Sot-363; Transistor Polarity:Dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:22Kohm; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi MUN5212DW1T1G.

Newark

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series two BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.

North Star Micro