onsemi MUN5233DW1T1G

Name: onsemi MUN5233DW1T1G
Brand: onsemi
SKU: MUN5233DW1T1G

Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm

$ 0.059

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Distributor		SKU		Min	Pkg
Avnet	2	MUN5233DW1T1G	45,000	3K						0.032	5h
Newark	3	MUN5233DW1T1G	1,150	1	Cut Tape	0.010	0.010	0.010	0.010	0.010
Verical	5	MUN5233DW1T1G	14,650	9147						0.041
Arrow Electronics	4	MUN5233DW1T1G	1,472	1		0.242	0.149	0.093	0.059	0.059
Master Electronics		MUN5233DW1T1G	15,000	3K						0.044

Inventory History

3 month trend: -15.30%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MUN5233DW1T1G.

IHS

Datasheet11 pages4 years ago

Upverter

Newark

Master Electronics

Arrow Electronics

Inventory History

3 month trend:

-15.30%

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Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi MUN5233DW1T1G provided by its distributors.

Bipolar Pre-Biased / Digital Transistor, BRT, Dual NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm

Avnet Silica

Bipolar Transistors (BJT); MUN5233DW1T1G; ON SEMICONDUCTOR; NPN; 50 V; 100 mA; 6

Maritex

Transistor: Npn X2; Bipolar; Brt; 50V; 0.1A; 0.25W; Sot363; R1: 4.7Kî©

Sensible Micro

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

IHS

MUN Series 50V 100 mA 4.7 kOhm NPN Silicon Dual Bias Resistor Transistor SOT-363

Future Electronics

Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R

Verical

2 NPN pre-biased (Dual) 250mW 100mA 50V SOT-363 Digital Transistors ROHS

Dasenic

Transistor Polarity:Dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:4.7Kohm; Base Emitter Resistor R2:47Kohm; No. Of Pins:6 Pin Rohs Compliant: Yes |Onsemi MUN5233DW1T1G.

Newark

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series two BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.

North Star Micro