onsemi MPSA29

Name: onsemi MPSA29
Brand: onsemi
SKU: MPSA29

MPSAXX Series NPN 625 mW 100V 800 mA Through Hole Darlington Transistor TO-92-3

$ 0.124

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Future Electronics	3	MPSA29	65,000	10K	Bulk					0.114
Avnet	4	MPSA29	4,839	12500							5d
Newark	2	MPSA29	4,089	1		0.554	0.356	0.238	0.171	0.133
Verical	7	MPSA29	80	17				0.178	0.119	0.089
Arrow Electronics	2	MPSA29	7,025	1		0.510	0.307	0.186	0.122	0.106

Inventory History

3 month trend: -4.55%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MPSA29.

IHS

Datasheet5 pages4 years ago

Datasheet5 pages10 years ago

Datasheet3 pages25 years ago

Datasheet4 pages0 years ago

Upverter

Future Electronics

Master Electronics

B+D Enterprises

Inventory History

3 month trend:

-4.55%

CAD Models

Download onsemi MPSA29 symbol, footprint, and 3D STEP models from our trusted partners.

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Ultra Librarian	SymbolFootprint		Download

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Alternate Parts

This Part

Alternate Parts

onsemiMPSA29

onsemiMPSA29-D26Z

Price @ 1000

$ 0.124

$ 0.146

Stock

1,328,877

1,161,487

Authorized Distributors

Mount

Through Hole

Case/Package

TO-92

Polarity

NPN

Collector Emitter Breakdown Voltage

100 V

Max Collector Current

500 mA

800 mA

Transition Frequency

125 MHz

Collector Emitter Saturation Voltage

1.5 V

hFE Min

10000

Power Dissipation

1.5 W

625 mW

Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi MPSA29 provided by its distributors.

MPSAXX Series NPN 625 mW 100V 800 mA Through Hole Darlington Transistor TO-92-3

Future Electronics

Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon, TO-226AA

IHS

Bipolar Transistors (BJT); MPSA29; ON SEMICONDUCTOR; NPN; 3; 100 V; 500 mA

Maritex

NPN Bipolar Junction Darlington Transistor

onsemi

1.5V@ 100¦ÌA,100mA NPN - Darlington 625mW 12V 500nA 100V 100V 800mA TO-92-3 5.33mm

UnikeyIC

NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. See MPSA28 for characteristics.

Fairchild Semiconductor

TRANSISTOR, NPN, 100V, 0.5A, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 1.5W; DC Collector Current: 500mA; DC Current Gain hFE: 10000hFE;

Farnell