onsemi MMBTA28

Name: onsemi MMBTA28
Brand: onsemi
SKU: MMBTA28

MMBTA28 Series 80 V CE Breakdown 0.8 A NPN Darlington Transistor - SSOT-3

$ 0.167

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Newark	2	MMBTA28	4	5	Cut Tape		0.327	0.208	0.187	0.187
Arrow Electronics		MMBTA28	9,000	1		0.549	0.335	0.213	0.143	0.104
Verical		MMBTA28	9,000	69				0.213	0.143	0.104
Onlinecomponents.com		MMBTA28	0	250	Bulk				0.283	0.129
Future Electronics	2	MMBTA28	0	3K	Tape & Reel					0.118

Inventory History

3 month trend: -75.58%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MMBTA28.

onsemi

Datasheet7 pages4 years ago

Datasheet0 pages0 years ago

IHS

Master Electronics

Newark

Fairchild Semiconductor

Inventory History

3 month trend:

-75.58%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiMMBTA28

Diodes Inc.MMBTA28-7-F

Price @ 1000

$ 0.167

$ 0.078

Stock

296,924

2,259,713

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-236-3

SOT-23

Polarity

NPN

Collector Emitter Breakdown Voltage

80 V

Max Collector Current

800 mA

500 mA

Transition Frequency

125 MHz

Collector Emitter Saturation Voltage

1.2 V

1.5 V

hFE Min

10000

Power Dissipation

350 mW

310 mW

Supply Chain

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1996-01-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi MMBTA28 provided by its distributors.

MMBTA28 Series 80 V CE Breakdown 0.8 A NPN Darlington Transistor - SSOT-3

Future Electronics

NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03.

Fairchild Semiconductor

TRANSISTOR, NPN, 80V, 0.8A, SUPERSOT-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 125MHz; Power Dissipation Pd: 350mW; DC Collector Current: 800mA; DC Current Gain hFE: 10000hF

Farnell

Transistor; Transistor Type:Darlington; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:80V; Continuous Collector Current, Ic:800mA; Collector Emitter Saturation Voltage, Vce(sat):1.2V; Power Dissipation, Pd:350mW ;RoHS Compliant: Yes

Newark