onsemi MJD45H11G

Name: onsemi MJD45H11G
Brand: onsemi
SKU: MJD45H11G

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

$ 0.449

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Future Electronics	5	MJD45H11G	9,975	40	Tube			0.535	0.505	0.485
Avnet		MJD45H11G	7,283	75				0.415	0.389	0.383	1d
Newark		MJD45H11G	9,093	1		1.220	0.882	0.540	0.402	0.327
Arrow Electronics	2	MJD45H11G	5,455	1		1.475	1.475	0.370	0.370	0.370
Verical	3	MJD45H11G	5,440	17				0.371	0.371	0.371

Inventory History

3 month trend: +97.75%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MJD45H11G.

IHS

Datasheet11 pages4 years ago

Newark

onsemi

TME

JRH Electronics

Inventory History

3 month trend:

+97.75%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiMJD45H11G

onsemiMJD45H11T4G

Price @ 1000

$ 0.449

$ 0.367

Stock

967,075

6,624,586

Authorized Distributors

Mount

Case/Package

DPAK

TO-252-3

Polarity

PNP

Collector Emitter Breakdown Voltage

80 V

Max Collector Current

8 A

Transition Frequency

90 MHz

Collector Emitter Saturation Voltage

1 V

hFE Min

Power Dissipation

1.75 W

Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Related Parts

onsemiMJD45H11T4G

Bipolar (BJT) Single Transistor, PNP, 80 V, 8 A, 20 W, TO-252 (DPAK), Surface Mount

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onsemiMJD45H11RLG

Tape & Reel (TR) Surface Mount PNP Single Bipolar (BJT) Transistor 40 @ 4A 1V 1muA 20W 90MHz

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onsemiNJVMJD45H11T4G

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

Details

Descriptions

Descriptions of onsemi MJD45H11G provided by its distributors.

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

IHS

Bipolar Transistors (BJT); MJD45H11G; ON SEMICONDUCTOR; PNP; 3; 80 V; 8 A

Maritex

8 A, 80 V PNP Power Bipolar Junction Transistor

onsemi

80V 1.75W 40@4A,1V 8A PNP TO-252 Bipolar Transistors - BJT ROHS

Dasenic

MJD Series 80 V 8 A PNP Complementary Power Transistor - TO-252-3

Future Electronics

Bipolar Transistors - BJT 8A 80V 20W PNP

Digi-ic_SMART PIONEER

Trans GP BJT PNP 80V 8A 1750mW 3-Pin(2+Tab) DPAK Tube

Verical

TRANSISTOR, PNP, D-PAK; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 90MHz; Power Dissipation Pd: 20W; DC Collector Current: 8A; DC Current Gain hFE: 60hFE; Transistor Case Style:

Farnell

Rf Transistor, Pnp, -80V, 90Mhz, D-Pak; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:8A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MJD45H11G.

Newark

Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 60 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tube / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.5 / Reflow Temperature Max. °C = 260

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