Descriptions of onsemi MJD32CT4G provided by its distributors.
Bipolar (BJT) Single Transistor, General Purpose, PNP, 100 V, 3 A, 15 W, TO-252 (DPAK)
Bipolar (BJT) Transistor PNP 100 V 3 A 3MHz 1.56 W Surface Mount DPAK
COMPLEMENTARY POWER TRANSISTOR Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
Bipolar Transistors (BJT); MJD32CT4G; ON SEMICONDUCTOR; PNP; 3; 100 V; 3 A
3.0 A, 100 V PNP Bipolar Power Transistor
100V 1.56W 10@3A,4V 3A PNP TO-252 Bipolar Transistors - BJT ROHS
MJD Series 100 V 3 A PNP Complementary Power Transistor - TO-252-3
Trans GP BJT PNP 100V 3A 1560mW 3-Pin(2+Tab) DPAK T/R
Trans Bjt Single, Pnp, 100V, 3A; |Onsemi MJD32CT4G.
onsemi PNPTransistor, DPAK (TO-252)encapsulation, SMD mount, Maximum DC collector current-3 A, maximum collector-emission voltage-100 V
TRANSISTOR, BIPOL, PNP, -100V, TO-252-4; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 15W; DC Collector Current: -3A; DC Current Gain hFE: 10hFE; Tra