onsemi MJD253T4G

Name: onsemi MJD253T4G
Brand: onsemi
SKU: MJD253T4G

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

$ 0.235

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Avnet	2	MJD253T4G	5,576	2500						0.168	1d
Newark	3	MJD253T4G	2,667	5	Cut Tape		0.540	0.403	0.367	0.367
Arrow Electronics		MJD253T4G	1,348	1		0.637	0.430	0.316	0.222	0.222
Verical		MJD253T4G	1,348	9			0.430	0.316	0.222	0.162
Rochester Electronics		MJD253T4G	1,555					0.216	0.180	0.160	10h

Inventory History

3 month trend: +8.20%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MJD253T4G.

Master Electronics

Datasheet8 pages9 years ago

IHS

onsemi

Newark

Electro Sonic

Inventory History

3 month trend:

+8.20%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiMJD253T4G

onsemiNJVMJD253T4G

Price @ 1000

$ 0.235

$ 0.416

Stock

782,991

177,316

Authorized Distributors

Mount

Case/Package

DPAK

Polarity

PNP

Collector Emitter Breakdown Voltage

100 V

Max Collector Current

4 A

Transition Frequency

40 MHz

Collector Emitter Saturation Voltage

600 mV

hFE Min

Power Dissipation

1.4 W

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-04-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi MJD253T4G provided by its distributors.

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

IHS

Bipolar Transistors (BJT); MJD253T4G; ON SEMICONDUCTOR; PNP; 3; 100 V; 4 A

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BIP DPAK PNP 4A 100V TR; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 40MHz; Power Dissipation Pd: 12.5W; DC Collector Current: -4A; DC Current Gain hFE: 40hFE; Transistor Case S

Farnell