onsemi MJD127G

Name: onsemi MJD127G
Brand: onsemi
SKU: MJD127G

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

$ 0.487

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	3	MJD127G	145	75				0.477	0.447	0.440	17h
Future Electronics		MJD127G	1,360	40	Tube			0.465	0.435	0.415
Newark	2	MJD127G	5,633	1		1.290	1.200	0.442	0.442	0.442
Verical	4	MJD127G	1,425	75				0.424	0.424	0.424
Arrow Electronics	3	MJD127G	1,468	1		1.540	1.399	0.445	0.445	0.445

Inventory History

3 month trend: -16.29%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MJD127G.

Upverter

Datasheet7 pages17 years ago

Datasheet8 pages14 years ago

IHS

onsemi

Newark

Electro Sonic

Inventory History

3 month trend:

-16.29%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiMJD127G

onsemiMJD127T4G

Price @ 1000

$ 0.487

$ 0.318

Stock

523,207

4,262,426

Authorized Distributors

Mount

Case/Package

DPAK

Polarity

PNP

Collector Emitter Breakdown Voltage

100 V

Max Collector Current

8 A

Transition Frequency

4 MHz

Collector Emitter Saturation Voltage

2 V

hFE Min

100

Power Dissipation

20 W

Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Related Parts

onsemiMJD127T4G

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

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onsemiKSH127TF

KSH Series PNP 1.75 W 100 V 8 A SMT Silicon Darlington Transistor - TO-252-3

Details

onsemiMJD127TF

8.0 A, 100 V PNP Darlington Bipolar Power Transistor

Details

Descriptions

Descriptions of onsemi MJD127G provided by its distributors.

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

IHS

8.0 A, 100 V PNP Darlington Bipolar Power Transistor

onsemi

Bipolar Transistors (BJT); MJD127G; ON SEMICONDUCTOR; PNP; 3; 100 V; 8 A

Maritex

MJD Series PNP 20 W 100 V 8 A Surface Mount Darlington Transistor - TO-252-3

Future Electronics

Darlington Transistor, Darlington, PNP, 100 V, 1.75 W, 8 A, TO-252 (DPAK), 3 Pins

Avnet

TRANSISTOR, DARLINGTON, SI, PNP, AMPLIFIER, POWER, VO 100VDC, VI 5VDC, IO 8ADC, PD 20W

RS (Formerly Allied Electronics)

BIPOLAR TRANSISTOR, PNP, -100V; Transistor Polarity:PNP; No. of Pins:4Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:AEC-Q101; Collector Emitter Voltage Max:100V RoHS Compliant: Yes

Newark

DARLINGTON TRANSISTOR, D-PAK; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -100V; Transition Frequency ft: -; Power Dissipation Pd: 1.75W; DC Collector Current: -8A; DC Current Gain hFE: 12hFE; Transistor Case

Farnell

Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 100 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tube / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 4 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 4.5 / Reflow Temperature Max. °C = 260

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