Descriptions of onsemi MJD122T4G provided by its distributors.
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
8.0 A, 100 V NPN Darlington Bipolar Power Transistor
Bipolar Transistors (BJT); MJD122T4G; ON SEMICONDUCTOR; NPN; 3; 100 V; 8 A
MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3
ON SEMI MJD122T4G NPN DARLINGTON TRANSISTOR, 8 A 100 V HFE:100, 3-PIN DPAK
onsemi Darlington transistor, NPNTriode, 8 A, DPAK (TO-252)encapsulation, surface mount, 3Pin
Trans Darlington NPN 100 Volt 8A 3-Pin (2+Tab) DPAK Tape and Reel
DARLINGTON TRANSISTOR, NPN, 100V, D-PAK, FULL REEL
100V 1000@4V,4A NPN 8A 1.75W TO-252-2(DPAK) Darlington Transistors ROHS
DARLINGTON TRANSISTOR, NPN, 100V, D-PAK, FULL REEL; Transistor Polarity:NPN; No. of Pins:3Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:100V RoHS Compliant: Yes
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 1000 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 4 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 4 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 4.5 / Reflow Temperature Max. °C = 260