onsemi MJD122T4G

Name: onsemi MJD122T4G
Brand: onsemi
SKU: MJD122T4G

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

$ 0.415

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Future Electronics	3	MJD122T4G	90,000	2500	Tape & Reel					0.310
Avnet	2	MJD122T4G	2,500	2500						0.338	5d
Newark	3	MJD122T4G	2,684	1	Cut Tape	1.250	1.040	0.746	0.542	0.542
Verical	3	MJD122T4G	141	18				0.339	0.339	0.339
Arrow Electronics		MJD122T4G	141	1		0.645	0.514	0.339	0.339	0.339

Inventory History

3 month trend: -12.31%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MJD122T4G.

Upverter

Datasheet7 pages17 years ago

Datasheet9 pages9 years ago

IHS

Newark

Farnell

Master Electronics

Inventory History

3 month trend:

-12.31%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiMJD122T4G

STMicroelectronicsMJD122T4

Price @ 1000

$ 0.415

$ 0.354

Stock

4,153,885

5,169,796

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

TO-252

Polarity

NPN

Collector Emitter Breakdown Voltage

100 V

Max Collector Current

8 A

Transition Frequency

4 MHz

Collector Emitter Saturation Voltage

2 V

4 V

hFE Min

100

Power Dissipation

20 W

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1991-06-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi MJD122T4G provided by its distributors.

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

IHS

8.0 A, 100 V NPN Darlington Bipolar Power Transistor

onsemi

Bipolar Transistors (BJT); MJD122T4G; ON SEMICONDUCTOR; NPN; 3; 100 V; 8 A

Maritex

MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3

Future Electronics

ON SEMI MJD122T4G NPN DARLINGTON TRANSISTOR, 8 A 100 V HFE:100, 3-PIN DPAK

RS (Formerly Allied Electronics)

Trans Darlington NPN 100 Volt 8A 3-Pin (2+Tab) DPAK Tape and Reel

Jameco

DARLINGTON TRANSISTOR, NPN, 100V, D-PAK, FULL REEL

Farnell

DARLINGTON TRANSISTOR, NPN, 100V, D-PAK, FULL REEL; Transistor Polarity:NPN; No. of Pins:3Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:100V RoHS Compliant: Yes

Newark

Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 1000 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 4 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 4 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 4.5 / Reflow Temperature Max. °C = 260

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