onsemi MJD122G

Name: onsemi MJD122G
Brand: onsemi
SKU: MJD122G

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

$ 0.51

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	MJD122G	8,499	1		0.449	0.420	0.414	0.414	0.414	5d
Future Electronics	2	MJD122G	7,900	40	Tube			0.465	0.435	0.420
Newark	2	MJD122G	8,499	1		1.190	0.969	0.969	0.485	0.449
Verical	5	MJD122G	45	16				0.486	0.466	0.383
Arrow Electronics	3	MJD122G	182	1		1.085	0.637	0.518	0.518	0.518

Inventory History

3 month trend: -23.26%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MJD122G.

Upverter

Datasheet7 pages17 years ago

Technical Drawing1 page3 years ago

Datasheet8 pages14 years ago

Datasheet9 pages9 years ago

IHS

onsemi

Farnell

element14 APAC

Inventory History

3 month trend:

-23.26%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiMJD122G

onsemiMJD122T4G

Price @ 1000

$ 0.51

$ 0.415

Stock

389,850

4,154,088

Authorized Distributors

Mount

Case/Package

DPAK

Polarity

NPN

Collector Emitter Breakdown Voltage

100 V

Max Collector Current

8 A

Transition Frequency

4 MHz

Collector Emitter Saturation Voltage

4 V

2 V

hFE Min

100

Power Dissipation

1.75 W

20 W

Supply Chain

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Related Parts

onsemiMJD122T4G

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Details

onsemiKSH127TF

KSH Series PNP 1.75 W 100 V 8 A SMT Silicon Darlington Transistor - TO-252-3

Details

onsemiKSH122TF

KSH Series NPN 1.75 W 100 V 8 A SMT Epitaxial Silicon Transistor - TO-252-3

Details

Descriptions

Descriptions of onsemi MJD122G provided by its distributors.

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

IHS

8.0 A, 100 V NPN Darlington Bipolar Power Transistor

onsemi

TRANSISTOR, DARLINGTON, SI, NPN, POWER, SWITCH, VO 100VDC, VI 5VDC, IO 8ADC, PD 20W

RS (Formerly Allied Electronics)

MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3

Future Electronics

Darlington Transistor, NPN, 100 V, 1.75 W, 8 A, TO-252 (DPAK), 3 Pins

Avnet

Trans Darlington NPN 100V 8A 1750mW 3-Pin(2+Tab) DPAK Tube / TRANS NPN DARL 100V 8A DPAK

Win Source

TRANSISTOR, DARLINGTON, 100V, 8A, D-PAK; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 1.75W; DC Collector Current: 8A; DC Current Gain hFE: 2500hFE; Tran

Farnell

Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 100 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tube / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 4 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 4.5 / Reflow Temperature Max. °C = 260

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