onsemi MJD122G
$ 0.461
Production
Inventory History
3 month trend: +154%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.461
$ 0.396
$ 0.396
Stock
445,448
3,986,738
3,986,738
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
DPAK
DPAK
DPAK
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
100 V
100 V
100 V
Max Collector Current
8 A
8 A
8 A
Transition Frequency
4 MHz
4 MHz
4 MHz
Collector Emitter Saturation Voltage
4 V
2 V
2 V
hFE Min
100
100
100
Power Dissipation
1.75 W
20 W
20 W
Supply Chain
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descriptions
Descriptions of onsemi MJD122G provided by its distributors.
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
8.0 A, 100 V NPN Darlington Bipolar Power Transistor
TRANSISTOR, DARLINGTON, SI, NPN, POWER, SWITCH, VO 100VDC, VI 5VDC, IO 8ADC, PD 20W
MJD Series 100 V 8 A NPN Complementary Darlington Power Transistor - TO-252-3
Darlington Transistor, NPN, 100 V, 1.75 W, 8 A, TO-252 (DPAK), 3 Pins
Trans Darlington NPN 100V 8A 1750mW 3-Pin(2+Tab) DPAK Tube / TRANS NPN DARL 100V 8A DPAK
onsemi Darlington transistor, NPNTriode, 8 A, DPAK (TO-252)encapsulation, surface mount, 3Pin
TRANSISTOR, DARLINGTON, 100V, 8A, D-PAK; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 1.75W; DC Collector Current: 8A; DC Current Gain hFE: 2500hFE; Tran
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 100 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tube / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 4 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 4.5 / Reflow Temperature Max. °C = 260
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +154%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageDPAK
Contact PlatingTin
Number of Pins3
Number of Terminals2
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage4 V
Collector Emitter Voltage (VCEO)100 V
Continuous Collector Current8 A
Current Rating8 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Gain Bandwidth Product4 MHz
hFE Min100
Max Collector Current8 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation1.75 W
Schedule B8541290080
Transition Frequency4 MHz
Voltage Rating (DC)100 V
Dimensions
Height2.51 mm
Length6.73 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements