Descriptions of onsemi MBT3946DW1T1G provided by its distributors.
ON SEMI MBT3946DW1T1G DUAL NPN+PNP RF BIPOLAR TRANSISTOR,0.2 A,40V,6-PIN SC-88
Bipolar Transistors (BJT); MBT3946DW1T1G; ON SEMICONDUCTOR; NPN, PNP; 6; 40 V; 200 mA
TRANS NPN/PNP 40V 0.2A SC88 / Trans GP BJT NPN/PNP 40V 0.2A 150mW 6-Pin SC-88 T/R
MBT Series 40 V 200 mA NPN/PNP Silicon Dual General Purpose Transistor - SOT-363
COMPLEMENTARY GENERAL PURPOSE TRANSISTOR Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, NPN and PNP, Silicon
BIPOLAR TRANSISTOR, NPN/PNP DUAL 40V SC-88, FULL REEL
Bipolar Transistor Array, General Purpose, Complementary NPN and PNP, 40 V, 40 V, 200 mA, 200 mA
General Purpose Transistors NPN,PNP Ic=200mA Vceo=40V hfe=100~300 P=150mW SOT363
200 mA 40 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR
Transistor, NPN/PNP, 40V, 0.2A, SOT-363-6, SMD
null 150mW 100@10mA,1V 200mA 1PCSNPN&1PCSPNP SOT-363-6(SC-70-6) Bipolar Transistors - BJT ROHS
Bipolar Transistor, Npn/Pnp Dual 40V Sc-88, Full Reel; Transistor Polarity:Npn, Pnp; Collector Emitter Voltage Max Npn:40V; Collector Emitter Voltage Max Pnp:40V; Continuous Collector Current Npn:200Ma; Power Dissipation Npn:150Mw Rohs Compliant: Yes |Onsemi MBT3946DW1T1G.
The MBT3946DW1T1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package this device is ideal for low-power surface mount applications where board space is at a premium.