onsemi FQU11P06TU
$ 0.761
EOL
Price and Stock
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Inventory History
3 month trend: -72.76%
CAD Models
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Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-09-14
Lifecycle StatusEOL (Last Updated: 2 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
Related Parts
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2.5W(Ta),51W(Tc) 5V@ 250¦ÌA 18nC@ 10V 1N 200V 360m¦¸@ 3.8A,10V 670pF@25V IPAK
InfineonIRLU120NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;I-Pak (TO-251AA);PD 48W
Descriptions
Descriptions of onsemi FQU11P06TU provided by its distributors.
Power MOSFET, P-Channel, QFET®, -60 V, -9.4 A, 185 mΩ, IPAK
Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
MOSFET, P CH,-60V,-9.4A, I-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: 9.4A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.185ohm; ; Available until stocks are exhausted Alternative available
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications..
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: -72.76%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight343.08 mg
Technical
Continuous Drain Current (ID)9.4 A
Current Rating-9.4 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance185 mΩ
Drain to Source Voltage (Vdss)-60 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance550 pF
Max Operating Temperature150 °C
Max Power Dissipation38 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max185 mΩ
Recovery Time83 ns
Rise Time40 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time15 ns
Turn-On Delay Time6.5 ns
Voltage Rating (DC)-60 V
Dimensions
Height6.1 mm
Length6.6 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance Statements