onsemi FQPF65N06

Name: onsemi FQPF65N06
Brand: onsemi
SKU: FQPF65N06

Power MOSFET, N-Channel, QFET®, 60 V, 40 A, 16 mΩ, TO-220F

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
Farnell	FQPF65N06	0	1		2.379*	2.110*	1.882*	1.425*	1.425*	10h
element14 APAC	FQPF65N06	0	1		2.648*	2.093*	1.773*	1.296*	1.234*	25m
Win Source	WS-FQPF65N06	300,000	100				0.586	0.390	0.390	12h
Worldway Electronics	FQPF65N06	16,921	7	Tube		0.356	0.345	0.327	0.327	1d
Aztech	FQPF65N06	867			6.880	6.880	6.880	6.880	6.880	2d

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQPF65N06.

IHS

Datasheet8 pages12 years ago

Datasheet0 pages0 years ago

Factory Futures

onsemi

Farnell

Newark

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-07-07

Lifecycle StatusObsolete (Last Updated: 6 days ago)

LTB Date2022-06-23

LTD Date2022-12-23

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)

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Descriptions

Descriptions of onsemi FQPF65N06 provided by its distributors.

Power MOSFET, N-Channel, QFET®, 60 V, 40 A, 16 mΩ, TO-220F

onsemi

Trans MOSFET N-CH 60V 40A 3-Pin(3+Tab) TO-220FP Tube

Verical

Power Field-Effect Transistor, 40A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

POWER FIELD-EFFECT TRANSISTOR, 4

ODG (Origin Data Global)

MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:60V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:56W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Package / Case:TO-220F; Power Dissipation Pd:56W; Power Dissipation Pd:56W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V

element14 APAC

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Fairchild Semiconductor