Infineon IRFI1010NPBF

Name: Infineon IRFI1010NPBF
Brand: Infineon
SKU: IRFI1010NPBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.012Ohm; ID 49A; TO-220 Full-Pak; PD 58W; -55de

$ 4.73

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRFI1010NPBF	0	1	Bulk	5.260	4.730	4.730	4.730	4.730	10h
Win Source	2	WS-IRFI1010N	9,400	8			8.113	5.409	5.409	5.409	22h
Worldway Electronics	2	IRFI1010NPBF	14,832	7	Tube		5.014	4.919	4.730	4.635	21h
Anlinkda	2	IRFI1010NPBF	51,608			0.730	0.654	0.560	0.549	0.526	4h
SHENGYU ELECTRONICS	2	IRFI1010NPBF	15,510	1		4.900	4.802	4.660	4.510	4.310	3d

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFI1010NPBF.

IHS

Datasheet10 pages21 years ago

Datasheet9 pages28 years ago

Newark

DigiKey

RS (Formerly Allied Electronics)

Farnell

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-04-01

Lifecycle StatusObsolete (Last Updated: 4 days ago)

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Descriptions

Descriptions of Infineon IRFI1010NPBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.012Ohm;ID 49A;TO-220 Full-Pak;PD 58W;-55de

RS (Formerly Allied Electronics)

Single N-Channel 55 V 0.012 Ohm 130 nC HEXFET® Power Mosfet - TO-220-3FP

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS

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Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-220 Full-Pak

Avnet

HEXFET POWER MOSFET Power Field-Effect Transistor, 49A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:49A; On Resistance Rds(On):0.012Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pinsrohs Compliant: Yes

Newark

MOSFET, N, FULLPAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:44A; Resistance, Rds On:0.012ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220FP; Termination Type:Through Hole; Current, Idm Pulse:290A; No. of Pins:3; Power Dissipation:47W; Power, Pd:47W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Isolation:2.5kV; Voltage, Vds Max:55V

Farnell