onsemi FDPF5N50NZF

N CH MOSFET, UNITFET, 500V, 4.2A, TO-220F; Transistor Polarity:N Channel; Contin

N-Channel Power MOSFET, UniFETTM II, FRFET®, 500 V, 4.2 A, 1.75 Ω, TO-220F

Power Field-Effect Transistor, 4.2A I(D), 500V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

N CH MOSFET, UNITFET, 500V, 4.2A, TO-220; N CH MOSFET, UNITFET, 500V, 4.2A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.57ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; MSL:-

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. The body diode’s reverse recovery performance of UniFET II FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.