onsemi FQP8N80C

Name: onsemi FQP8N80C
Brand: onsemi
SKU: FQP8N80C

Power Mosfet, N-channel, Qfet®, 800 V, 8 A, 1.55 Ω, TO-220

$ 1.626

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Distributor	SKU		Min	Pkg
Newark	FQP8N80C	891	1		4.640	2.730	2.510	2.510	2.510
Verical	FQP8N80C	740	740					2.409	2.409
DigiKey	FQP8N80CFS-ND	1,500	1	Tube	4.150	4.150	1.923	1.468	1.423
Onlinecomponents.com	FQP8N80C	0	50	Bulk			2.200	1.410	1.370
Future Electronics	FQP8N80C	0	1K	Tube				1.560	1.520

Inventory History

3 month trend: -50.78%

CAD Models

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Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQP8N80C.

Newark

Datasheet0 pages0 years ago

Upverter

IHS

onsemi

Factory Futures

Inventory History

3 month trend:

-50.78%

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-04-03

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FQP8N80C provided by its distributors.

Power MOSFET, N-Channel, QFET®, 800 V, 8 A, 1.55 Ω, TO-220

onsemi

800V 8A 1.55´Î@10V4A 178W 5V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

Dasenic

Power Field-Effect Transistor, 8A I(D), 800V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.29ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 178

Farnell

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor