onsemi FQP9N90C

Name: onsemi FQP9N90C
Brand: onsemi
SKU: FQP9N90C

Power Mosfet, N-channel, Qfet®, 900 V, 8.0 A, 1.4 Ω, TO-220

$ 1.84

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Distributor		SKU		Min	Pkg
Newark		FQP9N90C	406	1		3.210	3.210	3.210	3.210	3.210
Arrow Electronics		FQP9N90C	1,975	1		2.130	2.130	2.082	1.840	1.840
Rochester Electronics	2	FQP9N90C	86					1.840	1.650	1.550	17h
Onlinecomponents.com		FQP9N90C	0	50	Bulk			2.360	1.790	1.760
Master Electronics		FQP9N90C	0	50				2.360	1.790	1.760

Inventory History

3 month trend: +11.77%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQP9N90C.

Upverter

Technical Drawing1 page6 years ago

IHS

Factory Futures

onsemi

element14 APAC

Inventory History

3 month trend:

+11.77%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-10-02

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FQP9N90C provided by its distributors.

Power MOSFET, N-Channel, QFET®, 900 V, 8.0 A, 1.4 Ω, TO-220

onsemi

N-Channel 900 V 1.4 Ohm Flange Mount Mosfet - TO-220-3

Future Electronics

Power Field-Effect Transistor, 8A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:900V; Continuous Drain Current, Id:8A; On Resistance, Rds(on):1.4ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes

Newark

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor

MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:900V; Current, Id Cont:8A; Resistance, Rds On:1.12ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:32A; External Length / Height:4.83mm; No. of Pins:3; Power Dissipation:205W; Power, Pd:205W; Resistance, Rds on Max:1.4ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:900V; Voltage, Vgs th Max:5V; Width, External:10.67mm

Farnell